IMEC大面积外延薄膜硅太阳能电池的效率创新高，可达16.3%

2010-7-16 13:26| 发布者: admin| 查看: 1314| 评论: 0|来自: IMEC

摘要: IMEC在高质量的衬底上实现大面积（70cm2）和效率高达16.3%的外延太阳能电池。而在大面积低质量衬底上实现效率高达14.7%。这一成果表明了薄膜外延太阳能电池工业化生产的潜力。该研究结果完成了IMEC硅太阳能电池工业系 ...

       IMEC在高质量的衬底上实现大面积（70cm2）和效率高达16.3%的外延太阳能电池。而在大面积低质量衬底上实现效率高达14.7%。这一成果表明了薄膜外延太阳能电池工业化生产的潜力。该研究结果完成了IMEC硅太阳能电池工业系列计划（industrial affiliation program，IIAP）。该计划专注于研究开发先进的工艺技术，旨在大幅度降低硅原料的使用，同时提高电池效率，从而进一步大幅度降低每瓦特成本的峰值。
    除了晶圆为基础的体硅太阳能电池，IMEC在其硅太阳能电池IIAP计划中，还致力于在低成本的硅载体上生长外延薄膜(<20μm)硅太阳能电池的研发。在低成本的硅载体上进行外延薄膜工艺，大概类似于体工艺，外延工艺可以在现有的晶体硅太阳能电池生产线上用有限的设备投资实现。为了提高电池活跃区域的光的光学局限，特别研发了多孔硅反射镜。
    IMEC同时实现了在高掺杂高质量的衬底和低成本的衬底，UMG（升级冶金级）型以及多晶硅衬底上，进行20μm厚的高质量的硅外延堆叠的工艺。在P型掺杂背部表面场（BSF），P型基底和N型前端发射器由化学气相沉积形成。光俘获体系由前表面的等离子结构与位于外延/衬底界面的内部多孔硅布拉格反射镜相结合而构成。高质量衬底上的电池与铜板接触，低质量衬底上的电池的金属化则用金属印刷实现。这是形成前表面扩散场（FSF）和涂布氮化硅防反射涂层之后的最后一道工艺。在此方法中，外延生长的“晶圆性质”的衬底完全符合标准的工业（bulk）太阳能电池工艺。
    “这些高质量衬底上效率达16.3%的和低成本衬底上效率达14.7%的太阳能电池表明，这项技术是可以实现工业级效率的，”IMEC能源/太阳能项目经理Jef Poortmans说，“通过铜基接触实现的方案，我们可以进一步提高效率，使低成本晶圆上生产外延薄膜硅太阳能电池成为一项值得关注的工业技术。”

IMEC大面积(70cm2)高质量衬底上的外延太阳能电池，效率达16.3%

IMEC低质量衬底上用印刷金属线制成的外延薄膜硅太阳能电池，效率达14.7%

Imec large-area (70cm2) epitaxial solar cell with an efficiency of up to 16.3% on high-quality substrate.

Imec scientists realized large-area (70cm2) epitaxial solar cells with efficiencies of up to 16.3% on high-quality substrates. And efficiencies of up to 14.7% were achieved on large-area low-quality substrates, showing the potential of thin-film epitaxial solar cells for industrial manufacturing. The results were achieved within imec’s silicon solar cell industrial affiliation program (IIAP) that explores and develops advanced process technologies aiming a sharp reduction in silicon use, whilst increasing cell efficiency and hence further lowering substantially the cost per Watt peak.

Besides wafer-based bulk silicon solar cells imec aims at developing epitaxial thin-film (<20µm) silicon solar cells grown on low-cost silicon carriers within its silicon solar cell IIAP.. The epitaxial thin-film process on low-cost silicon carriers is generically similar to the bulk process and the epi-process can be implemented with limited equipment investment in an existing crystalline silicon solar cell manufacturing line. To improve the optical confinement of light in the active part of the cell, a buried porous Si reflector is developed.

Imec realized 20μm thick high-quality epitaxial silicon stacks both on top of a highly-doped high-quality substrate and on a low-cost, UMG (upgraded metallurgic grade)-type, multi-crystalline Si substrate. The p+-type back surface field (BSF), the p-type base and the n-type front-side emitter were grown by chemical vapor deposition. The light-trapping scheme consists of plasma texturing of the front surface in combination with an internal porous silicon Bragg reflector positioned at the epitaxial/substrate interface. The cells on the high-quality substrate are contacted with copper plating. For the cells made on the low-quality substrates, the metallization is realized with screenprinting, which is the final step after the formation of the diffused front surface field (FSF) and the silicon nitride antireflection coating. In this way, the epitaxially grown ‘wafer equivalent’ substrates are fully compatible with standard industrial (bulk) solar cell processing.

“These efficiencies of up to 16.3% on high-quality substrates and of up to14.7 % on low-cost substrates show that industrial-level efficiencies are within reach for this technology;” said Jef Poortmans, director imec energy/solar program. “By implementing copper-based contact schemes, we can further increase the efficiency making epitaxial thin-film silicon solar cells on low-cost wafers an interesting industrial technology.”

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IMEC大面积外延薄膜硅太阳能电池的效率创新高，可达16.3%

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